关键词: 功率半导体器件;击穿电压;终端结构;结深;优化

Abstract: According to the characteristics of junction terminal structure of power semiconductor devices (Such as BJT, VDMOSFET, etc) .And then the influences of junction terminal high concentration diffusion region junction depth and three different junction terminal protection structure ( junction terminal extension structure, floating field limit ring structure and the junction terminal etching structure ) parameters on the breakdown characteristic of device are analyzed comprehensively and systematically by using TCAD semiconductor device simulation software.The simulation results show that the junction terminal high concentration diffusion region, when the surface concentration is a fixed value, with the increase of diffusion region junction depth, the change characteristics of device breakdown voltage present first increases and then decreases.And the cylindrical junction at the edge of the area junction local electric field concentration is the dominating factor for decreasing the breakdown voltage.For three different junction terminal protection structure, can effectively reduce the cylindrical junction edge electric field intensity, the reverse breakdown characteristics significantly improved.Comparing three junction terminal protection structure, junction edge etching structure is works best at improvement of reverse breakdown characteristic.

Key words: power semiconductor device;breakdown voltage;terminal structure;junction depth;optimization