Research Progress on Growth of CsPbBr3 Single Crystals by Inverse Temperature Crystallization

doi:10.16552/j.cnki.issn1001-1625.2025.0981

Abstract

Abstract:

CsPbBr₃ single crystals， as a prominent class of all inorganic perovskite semiconductor materials， have attracted considerable research interest due to their remarkable properties including high density， high resistivity， and excellent charge carrier transport capabilities. These advantages equip them with great potential for applications in various cutting edge fields such as radiation detectors， photodetectors， and light-emitting diodes. However， their further development and practical deployment still face with dual challenges associated with defect control in large volume crystal growth and cost-effective manufacturing. Therefore， this paper comprehensively reviews the research progress of CsPbBr₃ single crystal growth via inverse temperature crystallization （ITC）. The critical factors affecting crystal quality， including solvent selection， solute concentration regulation， interfacial tension induction mechanism， and solubility-temperature dependence， are systematically analyzed. Effective strategies such as additive incorporation and seed crystal guidance are proposed to optimize crystal growth. Furthermore， the unique advantages of CsPbBr₃ single crystals in photoelectric detectors， such as high carrier mobility and long diffusion length， are highlighted. Finally， the development trend of this material in radiation monitoring， medical diagnosis， and other fields is discussed， providing theoretical and technical references for subsequent research.

Key words: CsPbBr₃ single crystal, inverse temperature crystallization, solvent selection, solute concentration, solubility, radiation detector

CLC Number:

TL814

HU Jianing, BU Hengyong. Research Progress on Growth of CsPbBr₃ Single Crystals by Inverse Temperature Crystallization[J]. BULLETIN OF THE CHINESE CERAMIC SOCIETY, 2026, 45(4): 1423-1432.

Figures/Tables 5

Fig.1 Schematic diagram of inverse temperature crystallization method［22］

Fig.2 Phase composition under different reactant ratios （n represents molar ratio of PbBr2 and CsBr）［24］

Fig.3 （a） Schematic diagram of changes in interaction energy between bulk solution and surface layer molecules［25］；（b） schematic diagram of crystal growth in a floating state［25］；（c） morphology evolution schematic of secondary phase particles［27］；（d） crystal surface growth mechanism， in which DPSI molecules regulate the diffusion of metal ions toward the surface of perovskite［28］

Fig.4 （a） Solubility curve of CsPbBr3 in DMSO solution［34］；（b） solubility curve and supersolubility curve of CsPbBr3 precursor solution with BBA added［35］；（c） solubility curve and supersolubility curve of CsPbBr3 in DMSO/DMF mixed solution containing ACN［36］

Table 1 Positions and mechanisms of doping elements

掺杂位点	代表性离子	主要作用与目标
X位（卤素位）	CI^-、I^-、CI^-/I^-共掺	调控［PbX₆］八面体骨架，抑制离子迁移，降低陷阱态密度，调控带隙，提高电阻率与载流子迁移率-寿命积（µτ），强化电学性能
B位（Pb位）	Mn²⁺、Sn⁴⁺、Eu³⁺、Zr⁴⁺、Sn²⁺、Ce³⁺等	部分取代Pb²⁺，钝化深能级缺陷，减少晶格空位，降低陷阱态密度，并可引入新发光中心，改善光学性能与结构稳定性
A位（Cs位）	Rb⁺、FA⁺、MA⁺、K⁺、Na⁺等	调节晶格应力，抑制有害相变，减少Cs空位，降低漏电流，提高电阻率，增强结构稳定性和电学性能

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Research Progress on Growth of CsPbBr₃ Single Crystals by Inverse Temperature Crystallization

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