Preparation of Ge20Sb10Se65Te5 Chalcogenide Glass and Impurity Removal Mechanism of Ti Wire

Abstract

Abstract: To investigate the preparation technology of Ge-Sb-Se-Te chalcogenide glass and Ti wire impurity removal mechanism, Ge₂₀Sb₁₀Se₆₅Te₅ chalcogenide glass was prepared by salt bath quenching technology. The structure, infrared transmittance, characteristic temperature and thermal expansion coefficient of the glass were tested. The crystallization activation energy of Ge₂₀Sb₁₀Se₆₅Te₅ glass was analyzed by Kissinger and Augis-Bennett theories. The results show that the sample has an amorphous structure with glass transition temperature of T_<sub>g=531 K (the heating rate is 10 K/min). The crystallization activation energy obtained by Kissinger and Augis-Bennett theories is fitted as 115.74 kJ/mol and 131.53 kJ/mol, respectively. The oxygen impurities in the glass sample are effectively removed by the method of Ti wire removal, and the glass sample has good infrared transmission performance. Finally, the residual materials on Ti wire surface were detected. Thermal expansion analysis shows that with the increase of heating rate, the expansion of glass at the yield point and softening point increase, which explains why a quartz container often cracks at rapidly heating rate.

Key words: chalcogenide glass, glass transition temperature, impurity removal, transmittance, thermal expansion, crystallization activation energy

CLC Number:

TN213

ZHANG Baodong, XU Junfeng, CHANG Fang'e. Preparation of Ge₂₀Sb₁₀Se₆₅Te₅ Chalcogenide Glass and Impurity Removal Mechanism of Ti Wire[J]. BULLETIN OF THE CHINESE CERAMIC SOCIETY, 2021, 40(9): 3145-3151.

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Preparation of Ge₂₀Sb₁₀Se₆₅Te₅ Chalcogenide Glass and Impurity Removal Mechanism of Ti Wire

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