AlN陶瓷衬底金刚石薄膜残余应力分析与调控

摘要/Abstract

摘要： 为系统研究金刚石薄膜残余应力的产生与分布,寻求缓解残余应力的方式,本文首先采用有限元软件ANSYS Workbench对降温过程中金刚石薄膜热应力进行模拟分析,并研究薄膜厚度对热应力的影响,然后利用微波等离子体化学气相沉积法(MPCVD),在氮化铝(AlN)陶瓷衬底上沉积不同厚度的金刚石薄膜,并改变薄膜降温时长和进行退火处理,最后通过SEM、Raman光谱进行表征分析。模拟显示,降温结束后热应力分布并不规律,最大主应力为拉应力,最小主应力为压应力,随着薄膜厚度的增加,最大主应力呈上升趋势,当薄膜厚度为200 μm时,最大主应力极大值为373 MPa,接近金刚石薄膜通常断裂强度范围(400~700 MPa),最小主应力和剪切应力随着薄膜厚度的增加呈下降趋势。通过Raman光谱表征得到:金刚石薄膜表面均为残余压应力,随着薄膜厚度和降温时长的增加,残余应力有所下降;经600 ℃氢气气氛原位退火处理后,薄膜应力畸变有所缓解,金刚石相拉曼峰强度有所提高。

关键词: 金刚石薄膜, AlN陶瓷, 残余应力, 数值模拟, MPCVD, 退火处理

Abstract: The research aims to investigate the generation and distribution of the residual stress in diamond thin films and explore methods of relieving it. Firstly, the finite element analysis software ANSYS Workbench was used to simulate the thermal stress of diamond thin films during the cooling process, and the effect of film thickness on thermal stress was studied. Then through the microwave plasma chemical vapor deposition (MPCVD), diamond thin films of varying thicknesses were deposited on aluminum nitride (AlN) ceramics substrates. The cooling duration was manipulated and annealing treatments were conducted. Characterization analyses were finally carried out using SEM and Raman spectroscopy. The simulation shows that after the cooling process, the distribution of thermal stress is irregular, with the maximum principal stress being tensile stress and the minimum principal stress being compressive stress. As the thickness of diamond thin films increases, the maximum principal stress shows an ascending trend, reaching a peak value of 373 MPa when the film thickness is 200 μm, which is close to the normal fracture strength range of diamond thin films (400~700 MPa). Conversely, the minimum principal stress and shear stress exhibit a decline as the film thickness increases. Raman characterization indicates that the surface of the diamond thin films has residual compressive stress. This residual stress decreases with increasing film thickness and cooling duration. After in-situ annealing at 600 ℃ in a hydrogen atmosphere, the stress-induced distortion in the films is alleviated, and there is a noticeable enhancement in the intensity of the diamond phase Raman peak.

Key words: diamond thin film, AlN ceramics, residual stress, numerical simulation, MPCVD, annealing treatment

中图分类号:

O484

师云龙, 林荣川, 魏莎莎, 隋玉胜, 董天雷. AlN陶瓷衬底金刚石薄膜残余应力分析与调控[J]. 硅酸盐通报, 2024, 43(10): 3814-3823.

SHI Yunlong, LIN Rongchuan, WEI Shasha, SUI Yusheng, DONG Tianlei. Residual Stress Analysis and Regulation of Diamond Thin Films on AlN Ceramics Substrates[J]. BULLETIN OF THE CHINESE CERAMIC SOCIETY, 2024, 43(10): 3814-3823.

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