Effect of Ni-Doping on Optical and Electrical Properties of FTO Thin Film and Its Mechanism Analysis

Abstract

Abstract: Ni-doped FTO thin films were prepared by aerosol-assisted chemical vapor deposition (AACVD) using monobutyltin trichloride (MBTC) as tin source, ammonium fluoride (NH₄F) as fluorine source, methanol as solvent, and nickel chloride hexahydrate (NiCl₂·6H₂O) as nickel source. The optical and electrical properties of FTO thin films were characterized and analyzed by spectrophotometer, four-probe resistor meter and Hall effect tester. The electronic structure of doped system was calculated based on first principles as well. The results indicate that the Ni-doped FTO thin films are tetragonal rutile structure, and the conductivity is improved. When Ni/Sn is 2%(atomic fraction), the quality factor Φ_TC reaches 3×10^-2 Ω^-1, the resistivity ρ is 3.79×10^-4 Ω·cm, the average transmittance of visible light is about 80%, the carrier concentration n is 6.88×10²⁰ cm^-3, and the mobility μ is 13.31 cm²·V^-1·s^-1.

Key words: Ni-doping, FTO thin film, AACVD, electrical property, first principle

CLC Number:

TB43

WU Baoqi, ZHANG Qin, LIU Qiying, SHI Guohua, ZHAO Hongli. Effect of Ni-Doping on Optical and Electrical Properties of FTO Thin Film and Its Mechanism Analysis[J]. BULLETIN OF THE CHINESE CERAMIC SOCIETY, 2023, 42(9): 3379-3386.

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