Abstract: In order to improve the performance of Indium Gallium Zinc Oxide Thin Film Transistor , IGZO-TFT with etch-stop layer was prepared in 2 .5 G experimental line .The effects of O 2 concentration during IGZO deposition , N2 O plasma treatment , the temperature of ESL deposition and the N 2 O/SiH4 ratio on the IGZO TFT Vth were systemically studied .The results show that the Vth would shift to positive position as the increasing of O 2 concentration , N2 O plasma treatment , and the decreasing of ESL deposition temperature .

Key words: IGZO TFT;etch stop layer;N2 O plasma;threshold voltage