BULLETIN OF THE CHINESE CERAMIC SOCIETY ›› 2016, Vol. 35 ›› Issue (8): 2600-2603.
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WANG Zhuo;TIAN Guang;SHI Shao-bo
Published:
Key words: H ion implantation;cavity;crystalline Si
CLC Number:
O483
WANG Zhuo;TIAN Guang;SHI Shao-bo. Effect of O Postimplantation on the Damage of H Implanted Crystalline Si[J]. BULLETIN OF THE CHINESE CERAMIC SOCIETY, 2016, 35(8): 2600-2603.
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