欢迎访问《硅酸盐通报》官方网站,今天是
分享到:

硅酸盐通报 ›› 2023, Vol. 42 ›› Issue (9): 3395-3401.

• 新型功能材料 • 上一篇    下一篇

电感耦合等离子刻蚀法加工石英晶体谐振器工艺研究

陈静白1, 张新海1, 刘峰2   

  1. 1.南方科技大学电子与电气工程系,深圳 518055;
    2.广东惠伦晶体科技股份有限公司,东莞 523757
  • 收稿日期:2023-05-16 修订日期:2023-06-13 出版日期:2023-09-15 发布日期:2023-09-14
  • 通信作者: 张新海,博士,教授。E-mail:zhangxh@sustech.edu.cn
  • 作者简介:陈静白(1997—),男,硕士研究生。主要从事石英晶体谐振器制备的研究。E-mail:12032216@mail.sustech.edu.cn
  • 基金资助:
    东莞市重点领域研发项目(20201200300112)

Fabrication of Quartz Crystal Resonator by Inductively Coupled Plasma Etching Method

CHEN Jingbai1, ZHANG Xinhai1, LIU Feng2   

  1. 1. Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
    2. Guangdong Faith Long Crystal Technology Co., Ltd., Dongguan 523757, China
  • Received:2023-05-16 Revised:2023-06-13 Online:2023-09-15 Published:2023-09-14

摘要: 为了制备石英晶体谐振器,在石英衬底上采用光刻和电感耦合等离子刻蚀技术制备台阶形貌,研究了制备过程中激励电源功率、偏压电源功率以及导热物质等工艺参数对刻蚀效果的影响。并且利用扫描电子显微镜对刻蚀图形的表面形貌进行了观察,通过实验与分析得到了符合工业生产要求的工艺参数。最后在最优工艺参数条件下,制得了高约22 μm的整齐的台阶形貌,并将干法刻蚀的结果与湿法刻蚀对比,展现了干法刻蚀的特点以及干法刻蚀应用于工业化生产石英晶体谐振器的潜力。

关键词: 石英晶体, 光刻, 电感耦合等离子刻蚀, 工艺参数, 台阶刻蚀

Abstract: In order to fabricate quartz crystal resonators, the step morphology was prepared on the quartz substrate by photolithography and inductively coupled plasma etching. The influences of the process parameters such as the excitation power, the bias power and the heat-conducting substance on the etching effect were studied. The surface morphology of etched pattern was observed using scanning electron microscope, and the process parameters which meet the requirements of industrial production were obtained through experiment and analysis. Finally, the vertical step morphology with a height of about 22 μm was obtained using optimized processing parameters. The characteristics of dry etching and the feasibility of dry etching for industrial production of quartz crystal resonators were demonstrated by comparing with wet etching.

Key words: quartz crystal, photolithography, inductively coupled plasma etching, processing parameter, step etching

中图分类号: