Si3N4粉体的表面改性及其对立体光刻成型的影响

硅酸盐通报 ›› 2021, Vol. 40 ›› Issue (6): 1957-1964.

Si₃N₄粉体的表面改性及其对立体光刻成型的影响

陈汝菲^1,2, 段文艳¹, 王功¹, 刘兵山¹, 刘晓冬¹, 李鑫¹

1.中国科学院空间应用工程与技术中心,太空制造技术重点实验室,北京 100094;
2.中国科学院大学,北京 100049

收稿日期:2021-03-12 修回日期:2021-04-07 出版日期:2021-06-15 发布日期:2021-07-08
通讯作者: 段文艳,博士,副研究员。E-mail:duanwenyan03@yeah.net
作者简介:陈汝菲(1996—),女,硕士研究生。主要从事氮化硅陶瓷材料的研究。E-mail:chenrufeizky@163.com
基金资助:
中国科学院空间应用工程与技术中心所长基金(CSU-QZKT-2019-04);国家自然科学基金(51802319) ;中国科学院青年创新促进会(2021160)

Surface Modification of Si₃N₄ Powder and Its Effect on Digital Light Processing

CHEN Rufei^1,2, DUAN Wenyan¹, WANG Gong¹, LIU Bingshan¹, LIU Xiaodong¹, LI Xin¹

1. Key Laboratory of Space Manufacturing Technology (SMT), Technology and Engineering Center for Space Utilization,Chinese Academy of Sciences, Beijing 100094, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China

Received:2021-03-12 Revised:2021-04-07 Online:2021-06-15 Published:2021-07-08

摘要/Abstract

摘要： 传统的陶瓷加工技术成本高、周期长、缺陷多,难以生产高性能陶瓷,立体光刻技术是制造形状复杂陶瓷零件的一种高效手段。纯Si₃N₄粉体的折射率(n=2.1)与树脂(n=1.49)的折射率相差较大,光散射严重,导致其陶瓷浆料的固化深度较低,很难直接利用立体光刻技术成型Si₃N₄陶瓷零件。为解决Si₃N₄粉体难以光固化的难题,本研究采用表面包覆有机物和表面氧化两种方式改性Si₃N₄粉体,并对比两种方式对Si₃N₄粉体光固化特性的影响规律。结果表明,包覆实验后,有机物单体经过一定反应时间后可均匀附着在Si₃N₄粉体表面;氧化处理后,Si₃N₄粉体表面形成非晶SiO₂层,该层均匀附着在粉体表面上。原始Si₃N₄粉体的固化深度仅为20 μm,经过包覆改性和800 ℃氧化4 h后,Si₃N₄粉体的固化深度分别可提高到40 μm和50 μm,两种方式均能有效提高原始Si₃N₄粉体的固化深度。

关键词: 立体光刻, 氮化硅, 表面改性, 包覆, 表面氧化, 固化深度

Abstract: Traditional ceramic processing technology has high cost, long cycle and many defects, which makes it difficult to produce high-performance ceramics. The refractive index (n=2.1) of pure Si₃N₄ powder is quite different from that of resin (n=1.49), and the light scattering is serious, which leads to the lower curing depth of the ceramic paste. It is difficult to directly use stereolithography technology to form Si₃N₄ ceramic parts. In order to solve the problem that Si₃N₄ powder is difficult to be cured, two methods of surface coating and surface oxidation were used to modify Si₃N₄ powder, and the influence of the two methods on the light curing characteristics of Si₃N₄ powder was compared. The results show that the organic monomer uniformly attaches to the surface of Si₃N₄ powder after a certain reaction time; after being oxidized at 800 ℃ for 4 h, amorphous SiO₂ layer is formed on the surface of Si₃N₄ powder, which is uniformly attached to the surface of Si₃N₄ powder. The curing depth of original Si₃N₄ powder is merely 20 μm, and the curing depth of Si₃N₄ powder after coating modification and oxidation modification increase to 40 μm and 50 μm, respectively. Both methods effectively improve the curing depth of original Si₃N₄ powder.

Key words: digital light processing, silicon nitride, surface modification, coating, surface oxidation, curing depth

中图分类号:

TQ174

陈汝菲, 段文艳, 王功, 刘兵山, 刘晓冬, 李鑫. Si₃N₄粉体的表面改性及其对立体光刻成型的影响[J]. 硅酸盐通报, 2021, 40(6): 1957-1964.

CHEN Rufei, DUAN Wenyan, WANG Gong, LIU Bingshan, LIU Xiaodong, LI Xin. Surface Modification of Si₃N₄ Powder and Its Effect on Digital Light Processing[J]. BULLETIN OF THE CHINESE CERAMIC SOCIETY, 2021, 40(6): 1957-1964.

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Si₃N₄粉体的表面改性及其对立体光刻成型的影响

Surface Modification of Si₃N₄ Powder and Its Effect on Digital Light Processing

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