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硅酸盐通报 ›› 2021, Vol. 40 ›› Issue (6): 1957-1964.

• 3D 打印陶瓷材料 • 上一篇    下一篇

Si3N4粉体的表面改性及其对立体光刻成型的影响

陈汝菲1,2, 段文艳1, 王功1, 刘兵山1, 刘晓冬1, 李鑫1   

  1. 1.中国科学院空间应用工程与技术中心,太空制造技术重点实验室,北京 100094;
    2.中国科学院大学,北京 100049
  • 收稿日期:2021-03-12 修回日期:2021-04-07 出版日期:2021-06-15 发布日期:2021-07-08
  • 通讯作者: 段文艳,博士,副研究员。E-mail:duanwenyan03@yeah.net
  • 作者简介:陈汝菲(1996—),女,硕士研究生。主要从事氮化硅陶瓷材料的研究。E-mail:chenrufeizky@163.com
  • 基金资助:
    中国科学院空间应用工程与技术中心所长基金(CSU-QZKT-2019-04);国家自然科学基金(51802319) ;中国科学院青年创新促进会(2021160)

Surface Modification of Si3N4 Powder and Its Effect on Digital Light Processing

CHEN Rufei1,2, DUAN Wenyan1, WANG Gong1, LIU Bingshan1, LIU Xiaodong1, LI Xin1   

  1. 1. Key Laboratory of Space Manufacturing Technology (SMT), Technology and Engineering Center for Space Utilization,Chinese Academy of Sciences, Beijing 100094, China;
    2. University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2021-03-12 Revised:2021-04-07 Online:2021-06-15 Published:2021-07-08

摘要: 传统的陶瓷加工技术成本高、周期长、缺陷多,难以生产高性能陶瓷,立体光刻技术是制造形状复杂陶瓷零件的一种高效手段。纯Si3N4粉体的折射率(n=2.1)与树脂(n=1.49)的折射率相差较大,光散射严重,导致其陶瓷浆料的固化深度较低,很难直接利用立体光刻技术成型Si3N4陶瓷零件。为解决Si3N4粉体难以光固化的难题,本研究采用表面包覆有机物和表面氧化两种方式改性Si3N4粉体,并对比两种方式对Si3N4粉体光固化特性的影响规律。结果表明,包覆实验后,有机物单体经过一定反应时间后可均匀附着在Si3N4粉体表面;氧化处理后,Si3N4粉体表面形成非晶SiO2层,该层均匀附着在粉体表面上。原始Si3N4粉体的固化深度仅为20 μm,经过包覆改性和800 ℃氧化4 h后,Si3N4粉体的固化深度分别可提高到40 μm和50 μm,两种方式均能有效提高原始Si3N4粉体的固化深度。

关键词: 立体光刻, 氮化硅, 表面改性, 包覆, 表面氧化, 固化深度

Abstract: Traditional ceramic processing technology has high cost, long cycle and many defects, which makes it difficult to produce high-performance ceramics. The refractive index (n=2.1) of pure Si3N4 powder is quite different from that of resin (n=1.49), and the light scattering is serious, which leads to the lower curing depth of the ceramic paste. It is difficult to directly use stereolithography technology to form Si3N4 ceramic parts. In order to solve the problem that Si3N4 powder is difficult to be cured, two methods of surface coating and surface oxidation were used to modify Si3N4 powder, and the influence of the two methods on the light curing characteristics of Si3N4 powder was compared. The results show that the organic monomer uniformly attaches to the surface of Si3N4 powder after a certain reaction time; after being oxidized at 800 ℃ for 4 h, amorphous SiO2 layer is formed on the surface of Si3N4 powder, which is uniformly attached to the surface of Si3N4 powder. The curing depth of original Si3N4 powder is merely 20 μm, and the curing depth of Si3N4 powder after coating modification and oxidation modification increase to 40 μm and 50 μm, respectively. Both methods effectively improve the curing depth of original Si3N4 powder.

Key words: digital light processing, silicon nitride, surface modification, coating, surface oxidation, curing depth

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