碳源对反应烧结碳化硅性能的影响

硅酸盐通报 ›› 2024, Vol. 43 ›› Issue (1): 312-316.

碳源对反应烧结碳化硅性能的影响

张喜飞, 陈定, 顾华志, 黄奥, 付绿平

武汉科技大学省部共建耐火材料与冶金国家重点实验室,武汉 430081

收稿日期:2023-08-12 修订日期:2023-10-18 出版日期:2024-01-15 发布日期:2024-01-16
通信作者: 陈定,博士,副教授。E-mail:chending_his@163.com
作者简介:张喜飞(1997—),男,硕士研究生。主要从事结构陶瓷方向的研究。E-mail:3557346514@qq.com
基金资助:
国家自然科学基金(52002295,52172023)

Effects of Carbon Sources on Properties of Reaction-Bonded Silicon Carbide

ZHANG Xifei, CHEN Ding, GU Huazhi, HUANG Ao, FU Lvping

The State Key Laboratory of Refractories and Metallurgy, Wuhan University ofScience and Technology, Wuhan 430081, China

Received:2023-08-12 Revised:2023-10-18 Online:2024-01-15 Published:2024-01-16

摘要/Abstract

摘要： 以炭黑和石墨为碳源,控制碳添加量为10%(质量分数,下同),研究了不同炭黑、石墨比例对反应烧结碳化硅性能的影响。结果表明,当炭黑添加量为4%、石墨添加量为6%时,反应烧结碳化硅的力学性能较佳,此时抗弯强度为251.7 MPa,断裂韧性为4.29 MPa·m^1/2。通过XRD检测及对XRD谱进行Rietveld精修,分析发现炭黑添加量为4%、石墨添加量为6%的反应烧结碳化硅中的游离Si含量为24.44%(质量分数),而石墨添加量为10%的反应烧结碳化硅中的游离Si含量为28.57%(质量分数),相比前者游离Si含量较高,减少游离Si的含量可以提高反应烧结碳化硅的力学性能。

关键词: 反应烧结碳化硅, 炭黑, 石墨, 力学性能, 游离Si

Abstract: The carbon black and graphite were used as carbon sources to fabricate reaction-bonded SiC, and the total content of carbon sources was 10% (mass fraction, the same below). The effects of different ratios of carbon black and graphite on properties of reaction-bonded SiC were investigated. The results show that the reaction-bonded SiC with 4% carbon black and 6% graphite has good mechanical properties, the flexural strength and fracture toughness reach to 251.7 MPa and 4.29 MPa·m^1/2. The mineral composition of reaction-bonded SiC was measured by XRD, the Rietveld simulation results of XRD patterns were adopted to measure phase content. The free Si content in reaction-bonded SiC with 4% carbon black and 6% graphite is 24.44% (mass fraction). The free Si content in reaction-bonded SiC with 10% graphite reaches to 28.57% (mass fraction), which is higher than that of the former. The decrease of free Si contributes to the improvement of mechanical properties of reaction-bonded SiC.

Key words: reaction-bonded SiC, carbon black, graphite, mechanical property, free Si

中图分类号:

TQ175

张喜飞, 陈定, 顾华志, 黄奥, 付绿平. 碳源对反应烧结碳化硅性能的影响[J]. 硅酸盐通报, 2024, 43(1): 312-316.

ZHANG Xifei, CHEN Ding, GU Huazhi, HUANG Ao, FU Lvping. Effects of Carbon Sources on Properties of Reaction-Bonded Silicon Carbide[J]. BULLETIN OF THE CHINESE CERAMIC SOCIETY, 2024, 43(1): 312-316.

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