基于原子力显微镜的G/FTO双层薄膜接触特性研究

硅酸盐通报 ›› 2023, Vol. 42 ›› Issue (6): 2262-2272.

所属专题：新型功能材料

基于原子力显微镜的G/FTO双层薄膜接触特性研究

王敏¹, 蔡文豪¹, 郁建元², 王智浩¹, 周昊哲¹, 赵洪力¹

1.燕山大学材料科学与工程学院亚稳材料制备技术与科学国家重点实验室,秦皇岛 066004;
2.唐山学院新材料与化学工程学院,唐山 066000

收稿日期:2023-04-04 修订日期:2023-04-04 出版日期:2023-06-15 发布日期:2023-06-25
通信作者: 赵洪力,博士,教授。E-mail:zhaohongli@ysu.edu.cn
作者简介:王敏(1995—),男,硕士研究生。主要从事透明导电氧化物薄膜的研究。E-mail:1414521603@qq.com
基金资助:
国家自然科学基金(52172105)

Contact Characteristics of G/FTO Bilayer Films Based on Atomic Force Microscopy

WANG Min¹, CAI Wenhao¹, YU Jianyuan², WANG Zhihao¹, ZHOU Haozhe¹, ZHAO Hongli¹

1. State Key Laboratory of Metastable Materials Preparation Technology and Science, College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004, China;
2. School of New Materials and Chemical Engineering, Tangshan University, Tangshan 066000, China

Received:2023-04-04 Revised:2023-04-04 Online:2023-06-15 Published:2023-06-25

摘要/Abstract

摘要： 本文采用湿法刻蚀法将单层石墨烯(G)与掺氟二氧化锡(FTO)薄膜复合在一起,采用拉曼(Raman)光谱、聚焦离子束(FIB)和透射电子显微镜(TEM)研究了G/FTO双层薄膜的结构、表面和界面形貌、元素分布等信息;采用基于原子力显微镜(AFM)的开尔文探针力显微镜(KPFM)和导电原子力显微镜(C-AFM)研究了FTO薄膜和G/FTO双层薄膜的形貌、接触电势差(CPD)、功函数、接触势垒。结果表明,FTO薄膜和G/FTO双层薄膜的接触电势差分别为-0.474、-0.441 V,两者功函数分别为5.329、5.296 eV。与FTO薄膜相比,G/FTO双层薄膜的迁移率由21.26 cm²·V^-1·s^-1增加到23.82 cm²·V^-1·s^-1。FTO薄膜和G/FTO双层薄膜相应的势垒高度分别(0.39±0.06) V和(0.33±0.05) V,G/FTO双层薄膜的势垒高度更小。

关键词: 石墨烯, 掺氟二氧化锡, 双层结构, 接触特性, 接触电势差, 功函数, 接触势垒

Abstract: Single layer graphene (G) and fluoride doped tin dioxide(FTO) thin film were compounded together by wet etching method. The structure, surface and interface topography and elemental distribution of G/FTO bilayer film were investigated by Raman spectroscopy, focused ion beam (FIB) and transmission electron microscopy (TEM). The topography, contact potential difference (CPD), work function and contact barrier of FTO film and G/FTO bilayer film were investigated using Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy (C-AFM) based on atomic force microscopy (AFM). The results show that the contact potential difference of FTO film and G/FTO bilayer film is -0.474 and -0.441 V, respectively, and the work function of the two films is 5.329 and 5.296 eV, respectively. Compared with FTO film, the mobility of G/FTO bilayer film increases from 21.26 cm²·V^-1·s^-1 to 23.82 cm²·V^-1·s^-1. The corresponding barrier height of FTO film and G/FTO bilayer film is (0.39±0.06) V and (0.33±0.05) V, respectively, and the barrier height of G/FTO bilayer film is smaller.

Key words: graphene, fluorine doped tin dioxide, bilayer structure, contact characteristic, contact potential difference, work function, contact barrier

中图分类号:

王敏, 蔡文豪, 郁建元, 王智浩, 周昊哲, 赵洪力. 基于原子力显微镜的G/FTO双层薄膜接触特性研究[J]. 硅酸盐通报, 2023, 42(6): 2262-2272.

WANG Min, CAI Wenhao, YU Jianyuan, WANG Zhihao, ZHOU Haozhe, ZHAO Hongli. Contact Characteristics of G/FTO Bilayer Films Based on Atomic Force Microscopy[J]. BULLETIN OF THE CHINESE CERAMIC SOCIETY, 2023, 42(6): 2262-2272.

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基于原子力显微镜的G/FTO双层薄膜接触特性研究

Contact Characteristics of G/FTO Bilayer Films Based on Atomic Force Microscopy

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