沉积温度和时间对多孔SiC薄膜的光致发光性能的影响

硅酸盐通报 ›› 2021, Vol. 40 ›› Issue (9): 3090-3097.

沉积温度和时间对多孔SiC薄膜的光致发光性能的影响

刘灿辉, 陶伟杰, 陶莹雪, 贺振华

武汉理工大学信息工程学院,武汉 430070

收稿日期:2021-04-01 修回日期:2021-05-22 出版日期:2021-09-15 发布日期:2021-10-08
通讯作者: 贺振华,博士,副教授。E-mail:zhenhuahe@whut.edu.cn
作者简介:刘灿辉(1994—),男,硕士研究生。主要从事荧光SiC薄膜制备的研究。E-mail:xy1801lch@whut.edu.cn
基金资助:
国家自然科学基金(11747133);中央高校基本科研业务费专项资金(195209019)

Effects of Deposition Temperature and Time on Photoluminescence Performance of Porous SiC Film

LIU Canhui, TAO Weijie, TAO Yingxue, HE Zhenhua

School of Information Engineering, Wuhan University of Technology, Wuhan 430070, China

Received:2021-04-01 Revised:2021-05-22 Online:2021-09-15 Published:2021-10-08

摘要/Abstract

摘要： 为了增强碳化硅(SiC)的光致发光性能,设计了三层结构的多孔SiC薄膜,衬底是单晶硅,中间层是双通阳极氧化铝(AAO)模板,顶层是SiC薄膜。采用磁控溅射工艺在AAO模板上沉积SiC薄膜,沉积温度为100~500 ℃,溅射时间为1~30 min。研究了沉积温度和沉积时间对SiC的光致发光性能的影响。结果表明:SiC薄膜为非晶态,SiC主要沉积在AAO模板的上层骨架结构上;与未经过溅射的样品相比,当衬底温度为200 ℃,溅射时间为1 min时, SiC的荧光性能增强至14.23倍;多孔SiC薄膜的荧光主要来自2.3 eV的主峰和2.8 eV的次主峰,主峰可能来自Al₂O₃的O缺陷发光与SiC本征发光,次主峰可能来自SiO₂的O缺陷发光。磁控溅射结合双通AAO模板法可应用于多孔荧光SiC薄膜的工业化快速制备。

关键词: 多孔荧光碳化硅, 阳极氧化铝, 磁控溅射, 沉积温度, 沉积时间, 光致发光性能

Abstract: In order to improve the photoluminescence (PL) performance of SiC, a three-layer structure porous SiC film was designed, the substrate was single crystal Si, the middle layer was the double pass anodic aluminum oxide (AAO) template, and the top layer was SiC film. SiC film was deposited on AAO template by magnetron sputtering, the deposition temperature was 100 ℃ to 500 ℃, and the deposition time was 1 min to 30 min. The effect of deposition temperature and time on PL property of SiC was investigated. The results show that the SiC film is amorphous phase, and SiC is mainly deposited on the upper skeleton structure of AAO template. At the deposition temperature of 200 ℃ and deposition time of 1 min, the PL intensity of SiC is enhanced to 14.23 times of blank sample. PL of porous SiC film is mainly from the main peak of 2.3 eV and the secondary peak of 2.8 eV. The main PL peak may be caused by the O vacancy in Al₂O₃ and SiC intrinsic PL. The secondary PL peak maybe comes from O vacancy in SiO₂. The magnetron sputtering processing combined with AAO template is suitable to the rapid industrial fabrication of porous SiC film.

Key words: porous fluorescent SiC, anodic aluminum oxide, magnetron sputtering, deposition temperature, deposition time, photoluminescence performance

中图分类号:

TB34

刘灿辉, 陶伟杰, 陶莹雪, 贺振华. 沉积温度和时间对多孔SiC薄膜的光致发光性能的影响[J]. 硅酸盐通报, 2021, 40(9): 3090-3097.

LIU Canhui, TAO Weijie, TAO Yingxue, HE Zhenhua. Effects of Deposition Temperature and Time on Photoluminescence Performance of Porous SiC Film[J]. BULLETIN OF THE CHINESE CERAMIC SOCIETY, 2021, 40(9): 3090-3097.

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