关键词: 缓冲层;薄膜;结晶;(SZO)_10(STO)_90

Abstract: PbZr_0.52Ti_0.48O_3 (PZT) thin films were prepared by a Sol-gel method with (SZO)_(10)(STO)_(90) buffer layer. The effect of (SZO)_(10)(STO)_(90) buffer layer on the crystallization and ferroelectric properties of PZT thin films was investigated. X-ray diffraction patterns show that the crystallization of PZT thin films varies with buffer layer clearly. (SZO)_(10)(STO)_(90) seeding layer almost results in the formation of a single (111)-textured PZT film, and (111)-orientation degree increases from 45.0% to more then 90.1%. At the same time, ferroelectric properties of the PZT thin film are improved by (SZO)_(10)(STO)_(90) seeding layer, remanent polarization increases from 26.8 μC/cm~2 to 38.8 μC/cm~2.

Key words: buffer layer%thin film%crystallization%(SZO)_10(STO)_90