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BULLETIN OF THE CHINESE CERAMIC SOCIETY ›› 2021, Vol. 40 ›› Issue (2): 591-596.

Special Issue: 陶瓷

• Ceramics • Previous Articles     Next Articles

Subcritical Hydrothermal Removal of Si Impurity in β-SiC Powder

WANG Bo1,2, DUAN Xiaobo1,2,3, DENG Lirong1,2,3, LU Shuhe1,2,3, WANG Xiaogang1,2,3, BAI Xiao1,2   

  1. 1. College of Materials Science and Engineering, Xi'an University of Science and Technology, Xi'an 710000, China;
    2. Shaanxi Engineering Research Center of Energy Saving and Polygeneration in Silicon and Magnesium Industry, Xi'an 710000, China;
    3. Xianyang Industrial Technology Research Institute of New Energy Materials, Xianyang 712000, China
  • Received:2020-10-13 Revised:2020-11-25 Online:2021-02-15 Published:2021-03-10

Abstract: The β-SiC powder synthesized by the multi-heat source method was selected as the raw material, and the Si impurity in the β-SiC powder were removed by the subcritical hydrothermal method. The phase composition, microstructure and Si impurity content of β-SiC powder were characterized by XRD, SEM, EDS and visible spectrophotometer, and focused on the optimization of subcritical hydrothermal removal process parameters for Si impurity in β-SiC powder. The results show that the Si impurities in β-SiC powder are mainly SiO2 and free silicon (F·Si), while the F·Si mainly existe in the form of large particles. The increase of reaction concentration, reaction time and reaction temperature have beneficial to improve the removal rate of Si impurities. The best hydrothermal treatment process is as follows: the liquid-solid ratio is 5∶2, the NaOH concentration is 4 mol·L-1, the best reaction temperature is 180 ℃, and the best reaction time is 4 h. Under this process, the removal rate of SiO2 in β-SiC powder reaches 100%, and the removal rate of F·Si is 96.4%.

Key words: β-SiC powder, hydrothermal method, alkali treatment, Si impurity, purification

CLC Number: