Abstract: Structure character and the radical theory of the technology on SiC synthesis by means of new designed furnace were introduced.The variation of temperature and pressure field were studied,simulation and experiment results were comparatively analyzed.The results show that the heat source in parallel and breathe freely furnace can Increase the reaction area.Pressure in furnace maintain between 0.101 and 0.113 MPa.The CO gas can be taken out from the exhaust system smoothly.The maximum velocity of gas in no more than 0.6 m/s,so it can effectively prevent the spray accident and toxic gases harm to personnel,the density of synthetic products has improved significantly.

Key words: heat source in parallel;full ventilation;silicon carbide;numerical simulation