Abstract: Researched the special electrical characteristics of P-type mono-crystalline solar silicon under conduction mode and polarity selection through the volt-ampere property test of it which detected the conduction current of it under D.C. pulse voltage, and the circuit model with diode and resistance was created. The test discovered that P-type mono-crystalline silicon had unidirection continuity. Subsequently, P-type mono-crystalline solar silicon with resistivity of 2.1 Ω·cm was cutting and single pulse voltage and current wave was grabbed respectively, which further researched the special discharge cutting properties of P-type mono-crystalline silicon with extremely complicated electrical characteristics in the actual cutting, and found that current wave of P-type mono-crystalline silicon showed "ramped" and silicon wafer after cutting morphology showed "conchoidal". The results show that the interelectrode resistance of P-type mono-crystalline silicon will decrease as the available area of the electricity interface growing, but the current of cutting will increase, and positive polarity machining is suitable for discharge cutting P-type mono-crystalline silicon.

Key words: interelectrode resistance%unidirection continuity%discharge cutting%silicon