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BULLETIN OF THE CHINESE CERAMIC SOCIETY ›› 2009, Vol. 28 ›› Issue (4): 839-843.

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Influence of Nd2O3 Doping on the Dielectric Properties of BSTO/MgO

WANG Yu-guang;LIU Min;ZHOU Hong-qing   

  • Published:2021-01-15

Abstract: ielectric properties: εr = 88, tanδ = 2.8×10-3(at 4.1 GHz) and tunability=6.9% (at external DC field E=2.0 kV/mm).

Key words: BSTO/MgO%Nd2O3%dielectric properties%doping

CLC Number: