碳化硅多孔介质内渗硅过程的仿真研究

硅酸盐通报 ›› 2024, Vol. 43 ›› Issue (9): 3424-3437.

碳化硅多孔介质内渗硅过程的仿真研究

张栩熙^1,2,3, 张舸^1,2,3, 包建勋^1,2,3, 崔聪聪^1,2,3, 郭聪慧^1,3, 李伟^1,3, 张巍^1,3, 朱万利^1,3, 徐传享^1,3, 曹琪^1,3, 董斌超^1,3, 周立勋^1,3, 李易霖⁴

1.中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室,长春 130033;
2.中国科学院大学,北京 100049;
3.中国科学院光学系统先进制造技术重点实验室,长春 130033;
4.东北石油大学地球科学学院,大庆 163318

收稿日期:2024-02-20 修订日期:2024-04-03 出版日期:2024-09-15 发布日期:2024-09-19
通信作者: 张舸,博士,研究员。E-mail:zhanggeciomp@126.com
作者简介:张栩熙(1997—),男,硕士研究生。主要从事碳化硅陶瓷与金属磨粒传感器方向的研究。E-mail:18243179951@163.com
基金资助:
吉林省产学研协同创新项目(YDZJ202303CGZH024)

Simulation Studies on Silicon Infiltration Process in Porous Silicon Carbide Media

ZHANG Xuxi^1,2,3, ZHANG Ge^1,2,3, BAO Jianxun^1,2,3, CUI Congcong^1,2,3, GUO Conghui^1,3, LI Wei^1,3, ZHANG Wei^1,3, ZHU Wanli^1,3, XU Chuanxiang^1,3, CAO Qi^1,3, DONG Binchao^1,3, ZHOU Lixun^1,3, LI Yilin⁴

1. State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2. University of Chinese Academic of Sciences, Beijing 100049, China;
3. Key Laboratory of Optical System Advanced Manufacturing Technology, Chinese Academy of Sciences, Changchun 130033, China;
4. School of Earth Sciences, Northeast Petroleum University, Daqing 163318, China

Received:2024-02-20 Revised:2024-04-03 Published:2024-09-15 Online:2024-09-19

摘要/Abstract

摘要： 对仿真熔硅在碳化硅多孔预制体内的渗流过程进行深入研究,不仅有助于了解反应熔渗过程缺陷的成因,还有助于揭示特殊渗流现象的成因。本文基于水平集法、N-S方程、杨氏方程,在由光学显微镜图像提取重构的二维孔道内,进行了熔硅毛细熔渗过程的仿真,重点模拟了由40 μm颗粒经模压构成的预制体和基于颗粒级配工艺的预制体内的熔渗过程。结果表明:入渗过程中较大的入口有利于熔渗的快速进行,熔渗过程在同一区域由非饱和渗流逐步向饱和渗流演变;预制体内的大空腔、尖角区与盲孔等孔隙结构有较大概率演化出孔隙型缺陷;预制体的排气出口边界条件与熔渗趋肤成壳现象呈强相关性。

关键词: 碳化硅, 渗流仿真, 细观孔道, 水平集法, 润湿, N-S方程

Abstract: The in-depth study of infiltration process of simulated molten silicon in the porous preform of silicon carbide not only helps to understand the causes of defects in the reaction infiltration process, but also is of great significance to reveal the causes of special infiltration phenomena. In this paper, based on level set method, N-S equation and Young’s equation, the simulation of capillary infiltration process of molten silicon was carried out in the two-dimensional channel extracted and reconstructed by optical microscope image. The infiltration process of preform composed of 40 μm particles by molding and the preform based on particle gradation process was simulated. The results show that the larger inlet in infiltration process is conducive to rapid infiltration. The infiltration process gradually evolves from unsaturated infiltration to saturated infiltration in the same area. The pore structure of large cavity, sharp corner area and blind hole in preform will have a greater probability to evolve pore type defects. The boundary conditions of exhaust outlet of preform has a strong correlation with skin-forming phenomenon of infiltration.

Key words: silicon carbide, infiltration simulation, microscopic channel, level set method, wetting, N-S equation

中图分类号:

TQ174.6⁺5

张栩熙, 张舸, 包建勋, 崔聪聪, 郭聪慧, 李伟, 张巍, 朱万利, 徐传享, 曹琪, 董斌超, 周立勋, 李易霖. 碳化硅多孔介质内渗硅过程的仿真研究[J]. 硅酸盐通报, 2024, 43(9): 3424-3437.

ZHANG Xuxi, ZHANG Ge, BAO Jianxun, CUI Congcong, GUO Conghui, LI Wei, ZHANG Wei, ZHU Wanli, XU Chuanxiang, CAO Qi, DONG Binchao, ZHOU Lixun, LI Yilin. Simulation Studies on Silicon Infiltration Process in Porous Silicon Carbide Media[J]. BULLETIN OF THE CHINESE CERAMIC SOCIETY, 2024, 43(9): 3424-3437.

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