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硅酸盐通报 ›› 2023, Vol. 42 ›› Issue (2): 743-750.

所属专题: 陶瓷

• 陶瓷 • 上一篇    下一篇

底电极原位退火与沉积温度对PZT薄膜性能影响研究

王兴1, 邹赫麟2   

  1. 1.太原学院机电与车辆工程系,太原 030032;
    2.大连理工大学,辽宁省微纳米技术及系统重点实验室,大连 116024
  • 收稿日期:2022-08-17 修订日期:2022-11-03 出版日期:2023-02-15 发布日期:2023-03-07
  • 作者简介:王 兴(1987—),男,博士,讲师。主要从事功能薄膜材料制备与应用的研究。E-mail:wangxing010@126.com
  • 基金资助:
    国家自然科学基金(51775088);山西省科技厅基础研究计划青年基金(202203021212017)

Influences of In-Situ Annealing and Deposition Temperature of Bottom Electrodes on Properties of PZT Films

WANG Xing1, ZOU Helin2   

  1. 1. Department of Electromechanical and Vehicle Engineering, Taiyuan University, Taiyuan 030032, China;
    2. Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024, China
  • Received:2022-08-17 Revised:2022-11-03 Online:2023-02-15 Published:2023-03-07

摘要: 采用磁控溅射工艺,在Pt/Ti底电极上沉积锆钛酸铅(PZT)薄膜,研究了原位退火温度与底电极沉积温度对溅射PZT薄膜结晶取向、微观结构、介电性能、铁电性能及疲劳性能的影响。X射线衍射(XRD)和扫描电子显微镜(SEM)分析结果表明,随着电极沉积温度升高,Pt晶粒尺寸增大,随着退火温度升高,PZT薄膜致密性变差。对室温制备的Pt/Ti底电极进行200 ℃原位退火30 min后,易于促进PZT薄膜沿(100)择优取向,而高温制备或经高温退火处理的Pt/Ti底电极更有利于PZT薄膜的(111)晶向生长。电学性能分析表明,室温制备的Pt/Ti底电极在经200 ℃原位退火30 min后,其PZT薄膜介电性能最优,同时展现较高的剩余极化强度和最小的矫顽场强,经历108次极化翻转后,初始极化下降仅为11%。

关键词: Pt/Ti底电极, 压电薄膜, 原位退火, 择优取向, 介电性能, 抗疲劳特性

Abstract: Lead zirconium titanate (PZT) films were deposited on Pt/Ti bottom electrode by magnetron sputtering process. The influences of in-situ annealing temperature and electrode deposition temperature on crystal orientation, microstructure, dielectric, ferroelectric, and fatigue characteristics of sputtered PZT films were studied. The results of X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis show that as the electrode deposition temperature increases, the Pt crystal grain size increases, and as the annealing temperature increases, the PZT film compactness becomes worse. The Pt/Ti bottom electrode prepared at room temperature after in-situ annealed in 200 ℃ for 30 min can easily promote the (100) orientation of the PZT film, while the Pt/Ti bottom electrode prepared or annealed at high temperature is more conducive to the (111) orientation. The best dielectric property is obtained in the PZT film according to electrical tests, in which the Pt/Ti bottom electrode is prepared at room temperature and in-situ annealed in 200 ℃ for 30 min. And the PZT film exhibits high residual polarization strength and minimum coercive field strength. After 108 times polarization inversions, the initial polarization of the film drop is only 11%.

Key words: Pt/Ti bottom electrode, piezoelectric film, in-situ annealing, preferred orientation, dielectric property, fatigue characteristic

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