Ge20Sb10Se65Te5硫系玻璃制备及Ti丝除杂机理研究

摘要/Abstract

摘要： 为了研究Ge-Sb-Se-Te四元硫系玻璃制备工艺和Ti丝除杂机理,通过盐浴冷却技术制备了Ge₂₀Sb₁₀Se₆₅Te₅硫系玻璃,并测试了其结构、红外透过率、玻璃特征温度和热膨胀系数,采用Kissinger和Augis-Bennett理论对Ge₂₀Sb₁₀Se₆₅Te₅玻璃的结晶活化能进行了分析研究。结果表明,所制试样为非晶结构,玻璃化转变温度T_g=531 K(升温速率为10 K/min),Kissinger和Augis-Bennett理论得到的结晶活化能分别为115.74 kJ/mol和131.53 kJ/mol。通过Ti丝除杂有效去除了氧杂质,得到的玻璃试样红外透过性能良好,并最后检测了Ti丝表面反应后的残留物质。热膨胀分析发现升温速率加快,玻璃在屈服点和软化点的膨胀量增加,这个结果解释了试管中的低温样品在重新加热时,升温过快石英试管经常裂开的原因。

关键词: 硫系玻璃, 玻璃化转变温度, 除杂, 透过率, 热膨胀, 结晶活化能

Abstract: To investigate the preparation technology of Ge-Sb-Se-Te chalcogenide glass and Ti wire impurity removal mechanism, Ge₂₀Sb₁₀Se₆₅Te₅ chalcogenide glass was prepared by salt bath quenching technology. The structure, infrared transmittance, characteristic temperature and thermal expansion coefficient of the glass were tested. The crystallization activation energy of Ge₂₀Sb₁₀Se₆₅Te₅ glass was analyzed by Kissinger and Augis-Bennett theories. The results show that the sample has an amorphous structure with glass transition temperature of T_<sub>g=531 K (the heating rate is 10 K/min). The crystallization activation energy obtained by Kissinger and Augis-Bennett theories is fitted as 115.74 kJ/mol and 131.53 kJ/mol, respectively. The oxygen impurities in the glass sample are effectively removed by the method of Ti wire removal, and the glass sample has good infrared transmission performance. Finally, the residual materials on Ti wire surface were detected. Thermal expansion analysis shows that with the increase of heating rate, the expansion of glass at the yield point and softening point increase, which explains why a quartz container often cracks at rapidly heating rate.

Key words: chalcogenide glass, glass transition temperature, impurity removal, transmittance, thermal expansion, crystallization activation energy

中图分类号:

TN213

张宝东, 许军锋, 常芳娥. Ge₂₀Sb₁₀Se₆₅Te₅硫系玻璃制备及Ti丝除杂机理研究[J]. 硅酸盐通报, 2021, 40(9): 3145-3151.

ZHANG Baodong, XU Junfeng, CHANG Fang'e. Preparation of Ge₂₀Sb₁₀Se₆₅Te₅ Chalcogenide Glass and Impurity Removal Mechanism of Ti Wire[J]. BULLETIN OF THE CHINESE CERAMIC SOCIETY, 2021, 40(9): 3145-3151.

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Ge₂₀Sb₁₀Se₆₅Te₅硫系玻璃制备及Ti丝除杂机理研究

Preparation of Ge₂₀Sb₁₀Se₆₅Te₅ Chalcogenide Glass and Impurity Removal Mechanism of Ti Wire

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