关键词: SiC;等离子体;刻蚀;模具

Abstract: Using a high density plasma ICP etching machine , Under different process conditions,The etching properties of SiC were investigated .The result shows that: With the increase of O2 flow ratio, the etching rate increases, when the flow ratio of O2 reaches 0.5, the maximum etching rate is 400 A°/min, then, the etching rate decreases.With the increase of atmospheric pressure , the etching rate increases. When the pressure reaches 15 Pa, the maximum etching rate is 580 A°/min, and then the etching rate decreases.The directionality of the ion becomes worse and the pitting becomes serious .Etching morphology will changesfrom the "凵"to "U", then to "V"type.SiC mold grooves have high machining accuracy, high processing efficiency, low roughness, Partial mold groove industry is satisfied .

Key words: SiC;plasma;etching;mode